PART |
Description |
Maker |
M27W800-150K6TR M27W800 M27W800-100B6TR M27W800-10 |
8 Mbit (1Mb x 8 or 512Kb x 16), Low Voltage UV EPROM and OTP EPROM 8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM 8兆8512KB × 16低压紫外线存储器和OTP存储 81兆812KB × 16低压紫外线存储器和OTP存储 8 MBIT (1MB X 8 OR 512KB X 16) LOW VOLTAGE UV EPROM AND OTP EPROM 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM
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SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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M29W004 M29W004BB M29W004BB120N1T M29W004BB120N6T |
4 Mbit 512Kb x8 / Boot Block Low Voltage Single Supply Flash Memory 4 MBIT (512KB X8, BOOT BLOCK) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY 4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
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ST Microelectronics SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
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LXT971ABE M25P64-VME6P M25P64-VMF6P M27C400206 M27 |
Series One Watt Zeners 64 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface 4 Mbit (256Kb x16) UV EPROM and OTP EPROM 8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM 64 Mbit (4Mbx16, Boot Block) 3V Supply Flash memory 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory 5V or 3V NVRAM Supervisor for Up to 8 LPSRAMs Serial access Real-Time Clock with alarm
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1N4728A STMICROELECTRONICS[STMicroelectronics]
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M29W800AT04 |
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory
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STMicroelectronics
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M29W400 M29W400B M29W400B-100M1R M29W400B-100M1TR |
4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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M29W400BT 6584 |
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)Low Voltage Single Supply Flash Memory From old datasheet system
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STMicro
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M27V401 |
4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM(4Mb低压UV EPROM和OTP EPROM)
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意法半导
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M38030F2L-XXXHP M38030F2L-XXXKP M38030F2L-XXXSP M3 |
256 Kbit (32K x 8) nvSRAM; Organization: 32Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 256 Kb; Package: SOIC 3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: 0 to 70 C 256K (32K x 8) Static RAM; Density: 256 Kb; Organization: 32Kb x 8; Vcc (V): 4.50 to 5.50 V; Three-PLL General Purpose FLASH Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 1 MHz to 166 MHz; Output Range: 1 MHz to 200 MHz; Outputs: 6 5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 256; Vcc (V): 3.3; fMax (MHz): 66; tPD (ns): 12 8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V; 9-Mbit (256K x 36/512K x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V 18-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V Four Output PCI-X and General Purpose Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 140 MHz; Outputs: 4; Operating Range: 0 to 70 C 18-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 2.4 to 2.6 V 4-Mbit (512K x 8) Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 4.50 to 5.50 V; 4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 2.20 to 3.60 V; 64K x 16 Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V; 1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 4.5 to 5.5 V; 9-Mbit (256K x 36/512K x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V 1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V; 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 16-Mbit (1M x 16 / 2M x 8) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 4.50 to 5.50 V; 4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT, BUSY; Density: 128 Kb; Organization: 8Kb x 16; Vcc (V): 4.5 to 5.5 V; Speed: 35 ns 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 2.4 to 2.6 V 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V 8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 4.50 to 5.50 V; 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V 256K x 16 Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 4.5 to 5.5 V; 9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM; Architecture: Standard Sync, Pipeline DCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V 4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V; 8-Mbit (1024K x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V; 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V 256K x 16 Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V; 8-Mbit (1M x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V; 3.3V Zero Delay Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 8; Operating Range: -40 to 85 C Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: -40 to 85 C 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 512K x 8 Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 4.5 to 5.5 V; 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 2.4 to 2.6 V 2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: -40 to 85 C 3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: -40 to 85 C 2M x 8 Static RAM; Density: 16 Mb; Organization: 2Mb x 8; Vcc (V): 3.0 to 3.6 V; 16 Mbit (512K X 32) Static RAM; Density: 16 Mb; Organization: 512Kb x 32; Vcc (V): 3.0 to 3.6 V; 3.3V Zero Delay Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 8; Operating Range: 0 to 70 C 8-Mbit (1M x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 3.0 to 3.6 V; 5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6 2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 3.0 to 3.6 V; 16-Mbit (1M x 16) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V; 4-Mbit (256K x 18) Pipelined DCD Sync SRAM; Architecture: Standard Sync, Pipeline DCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V 512K (32K x 16) Static RAM; Density: 512 Kb; Organization: 32Kb x 16; Vcc (V): 3.0 to 3.6 V; 4-Mbit (128K x 36) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 4 Mb; Organization: 128Kb x 36; Vcc (V): 3.1 to 3.6 V 1M x 16 Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V; Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C 3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: 0 to 70 C MoBL(R) 2 Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V; Rambus(R) XDR(TM) Clock Generator; VDD: 2.5 V; Input Frequency: 100 MHz to 133 MHz; Output Frequency: 300 MHz to 800 MHz; # Out: 4 2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V; 4-Mbit (128K x 36) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 4 Mb; Organization: 128Kb x 36; Vcc (V): 3.1 to 3.6 V 5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 167; tPD (ns): 7 2.5V or 3.3V, 200-MHz, 1:10 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 10; Operating Range: 0 to 70 C 5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 100; tPD (ns): 7 5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 7 18-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C Spread Spectrum Clock Generator; Voltage(V): 3.3 V; Input Frequency Range: 25 MHz to 100 MHz; Output Frequency Range: 25 MHz to 100 MHz; Operating Range: 0 to 70 C; Package: SOIC Low Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C 5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 143; tPD (ns): 9 单芯位CMOS微机 5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 154; tPD (ns): 6 单芯位CMOS微机 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机 5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9 单芯位CMOS微机 5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 3.3; fMax (MHz): 83; tPD (ns): 10 单芯位CMOS微机 5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6 单芯位CMOS微机 Three-PLL General-Purpose EPROM Programmable Clock Generator; Voltage (V): 3.3/5.0 V; Input Range: 1 MHz to 30 MHz; Output Range: .077 MHz to 100 MHz; Outputs: 6 单芯位CMOS微机 8-Mbit (512K x 16) MoBL(R) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机 High Speed Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating Range: 0 to 70 C 单芯位CMOS微机 3.3V SDRAM Buffer for Mobile PCs with 4 SO-DIMMs; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 100 MHz; Outputs: 10; Operating Range: 0 to 70 C 单芯位CMOS微机 3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: -40 to 85 C 单芯位CMOS微机 Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: -40 to 85 C 单芯位CMOS微机 2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 3.0 to 3.6 V; 单芯位CMOS微机 MoBL(R) 1 Mbit (128K x 8) Static RAM; Density: 1 Mb; Organization: 128Kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机 18-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 1-Mbit (128K x 8) Static RAM; Density: 1 Mb; Organization: 128Kb x 8; Vcc (V): 4.50 to 5.50 V; 单芯位CMOS微机 4-Mbit (256K x 18) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机 2-Mbit (64K x 32) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 2 Mb; Organization: 64Kb x 32; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机 200-MHz Field Programmable Zero Delay Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 10 MHz to 200 MHz; Outputs: 12; Operating Range: -40 to 85 C 单芯位CMOS微机 2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机 2-Mbit (256K x 8) Static RAM; Density: 2 Mb; Organization: 256Kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯8位CMOS微机 Very Low Jitter Field and Factory Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 10 MHz to 133 MHz; Output Range: 20 MHz to 200 MHz; Outputs: 2 单芯位CMOS微机 3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: 0 to 70 C 单芯位CMOS微机 3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: -40 to 85 C 单芯位CMOS微机 Three-PLL General Purpose FLASH Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 1 MHz to 166 MHz; Output Range: 0 MHz to 200 MHz; Outputs: 3 单芯位CMOS微机 1:8 Clock Fanout Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 350 MHz; Outputs: 8; Operating Range: -40 to 85 C 单芯位CMOS微机 Quad PLL Clock Generator with 2-Wire Serial Interface; Voltage (V): 2.5/3.3 V; Input Range: 27 MHz to 27 MHz; Output Range: 4.2 MHz to 166 MHz; Outputs: 5 单芯位CMOS微机 2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: 0 to 70 C 单芯位CMOS微机 3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: 0 to 70 C 单芯位CMOS微机 High Speed Multi-phase PLL Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 24 MHz to 200 MHz; Outputs: 11; Operating Range: 0 to 70 C 单芯位CMOS微机 2.5V or 3.3V, 200-MHz, 1:18 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 18; Operating Range: -40 to 85 C 单芯位CMOS微机 -bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 位AVR微控制器具有8K字节的系统内可编程闪 2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: 0 to 70 C 1:8 Clock Fanout Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 350 MHz; Outputs: 8; Operating Range: 0 to 70 C Spread Spectrum Clock Generator; Voltage(V): 3.3 V; Input Frequency Range: 4 MHz to 32 MHz; Output Frequency Range: 4 MHz to 32 MHz; Operating Range: 0 to 70 C; Package: SOIC High Speed Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating Range: 0 to 70 C 5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9
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Renesas Electronics Corporation. Renesas Electronics, Corp.
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M27V400 M27V400-100B1TR M27V400-100B6TR M27V400-10 |
NND - 4 MBIT (512KB X8 OR 256KB X16) UV EPROM AND OTP EPROM 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16紫外线存储器和OTP存储
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SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 ST Microelectronics
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M29F400BB45N1 M29F400BB45N1T M29F400BB45N3 M29F400 |
4 MBIT (512KB X8 OR 256KB X16, BOOT BLOCK) SINGLE SUPPLY FLASH MEMORY 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory 4兆位512KB的x856Kb的x16插槽,启动座单电源闪 Dual Precision Low-Power Single Supply Operational Amplifier 8-SOIC 4兆位512KB的x856Kb的x16插槽,启动座单电源闪 Automotive Catalog Excalibur High-Speed Low-Power Precision Operational Amplifiers 8-SOIC -40 to 125 4兆位512KB的x856Kb的x16插槽,启动座单电源闪 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory 4兆位512KB的x8256Kb的x16插槽,启动座单电源闪 Excalibur High-Speed Low-Power Precision Operational Amplifier 8-SOIC 4兆位512KB的x856Kb的x16插槽,启动座单电源闪 High-Speed, Low-Power, Precision Single Operational Amplifier 8-CDIP -55 to 125 4兆位512KB的x856Kb的x16插槽,启动座单电源闪 Excalibur High-Speed Low-Power Precision Operational Amplifier 8-CDIP -55 to 125 4兆位512KB的x856Kb的x16插槽,启动座单电源闪
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
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M48Z512AY-85PM9 |
4 MBIT (512KB X 8) ZEROPOWER SRAM
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ST Microelectronics
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